New Analytical Model for Single Electron Transistor

This paper presents a new exact analytical model for Single electron transistor (SET) applicable for circuit simulation. It was developed based on orthodox theory of single electronics using master equation. A scheme was suggested to determine the most probable occupied electron states. The proposed model is more flexible that is valid for single or multi gate, symmetric or asymmetric devices and can also consider the background charge effect. It can be used for large drain-source voltage range whatever the device biased under symmetric or asymmetric bias conditions. SET characteristics produced by the proposed model were verified against widely accepted single electron circuits simulator SIMON and show a good agreement. Also, the proposed model was implemented in a widely used commercial circuit simulator SPICE to enable simulation with conventional electronic elements. KeywordsSingle electron transistor, orthodox theory, master equation, Monte Carlo, SIMON, SET model.